PNP Epitaxial Silicon Transistor, 2000-FNFLD. Features a -40V Collector Base Voltage (VCBO) and 20V Collector Emitter Voltage (VCEO). Offers a maximum collector current of -500mA and a power dissipation of 625mW. Packaged in TO-92-3 with through-hole mounting, this lead-free and RoHS compliant component operates from -55°C to 150°C.
PackageTO-92-3
Current Rating-500mA
MountingThrough Hole
PolarityPNP
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Technical Specifications
Onsemi SS9012GTA technical specifications.
General
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | -40V |
| Collector Emitter Breakdown Voltage | 20V |
| Collector Emitter Saturation Voltage | -180mV |
| Collector Emitter Voltage (VCEO) | 20V |
| Collector-emitter Voltage-Max | 600mV |
| Current Rating | -500mA |
| Emitter Base Voltage (VEBO) | -5V |
| Height | 4.58mm |
| hFE Min | 64 |
| Lead Free | Lead Free |
| Length | 4.58mm |
| Max Breakdown Voltage | 20V |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Ammo Pack |
| Polarity | PNP |
| Power Dissipation | 625mW |
| RoHS Compliant | Yes |
| DC Rated Voltage | -20V |
| Weight | 0.24g |
| Width | 3.86mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi SS9012GTA Datasheet
Download the complete datasheet for Onsemi SS9012GTA to view detailed technical specifications.
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