The SS9012HTA is a PNP bipolar junction transistor with a collector-emitter breakdown voltage of 20V and a collector-emitter saturation voltage of -180mV. It has a maximum collector current of 500mA and a maximum power dissipation of 625mW. The transistor is packaged in a TO-92-3 case and is designed for through-hole mounting. It operates over a temperature range of -55°C to 150°C and is compliant with RoHS regulations.
PackageTO-92-3
Current Rating-500mA
MountingThrough Hole
PolarityPNP
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Technical Specifications
Onsemi SS9012HTA technical specifications.
General
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | -40V |
| Collector Emitter Breakdown Voltage | 20V |
| Collector Emitter Saturation Voltage | -180mV |
| Collector Emitter Voltage (VCEO) | 20V |
| Collector-emitter Voltage-Max | 600mV |
| Current Rating | -500mA |
| Emitter Base Voltage (VEBO) | -5V |
| hFE Min | 64 |
| Lead Free | Lead Free |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Ammo Pack |
| Polarity | PNP |
| Power Dissipation | 625mW |
| RoHS Compliant | Yes |
| DC Rated Voltage | -20V |
| Weight | 0.24g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi SS9012HTA Datasheet
Download the complete datasheet for Onsemi SS9012HTA to view detailed technical specifications.
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