PNP Bipolar Junction Transistor (BJT) in a TO-92 package, designed for through-hole mounting. Features a 45V collector-emitter breakdown voltage and a maximum collector current of 100mA. Offers a minimum DC current gain (hFE) of 60 and a transition frequency of 190MHz. Operates across a wide temperature range from -55°C to 150°C, with a maximum power dissipation of 450mW. This RoHS compliant component is lead-free and supplied in bulk packaging.
Frequency190MHz
PackageTO-92
Current Rating-100mA
MountingThrough Hole
Quick Jump:
Technical Specifications
Onsemi SS9015BBU technical specifications.
General
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | -50V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Voltage (VCEO) | 45V |
| Collector-emitter Voltage-Max | 700mV |
| Current Rating | -100mA |
| Emitter Base Voltage (VEBO) | -5V |
| Frequency | 190MHz |
| Gain Bandwidth Product | 190MHz |
| hFE Min | 60 |
| Lead Free | Lead Free |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 450mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Bulk |
| Polarity | PNP |
| Power Dissipation | 450mW |
| RoHS Compliant | Yes |
| Transition Frequency | 190MHz |
| DC Rated Voltage | -45V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi SS9015BBU Datasheet
Download the complete datasheet for Onsemi SS9015BBU to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.