NPN Epitaxial Silicon Transistor for RF applications. Features a 1.1GHz transition frequency and 15V collector-emitter breakdown voltage. Continuous collector current rating of 50mA with a maximum power dissipation of 400mW. Packaged in a TO-92 through-hole mount, this lead-free and RoHS compliant component operates from -55°C to 150°C.
Frequency1.1GHz
PackageTO-92
Current Rating50mA
MountingThrough Hole
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Technical Specifications
Onsemi SS9018FBU technical specifications.
General
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | 30V |
| Collector Emitter Breakdown Voltage | 15V |
| Collector Emitter Voltage (VCEO) | 15V |
| Collector-emitter Voltage-Max | 15V |
| Continuous Collector Current | 50mA |
| Current Rating | 50mA |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 1.1GHz |
| hFE Min | 28 |
| Lead Free | Lead Free |
| Max Collector Current | 50mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 400mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Operating Frequency | 1100 MHz |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 400mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 1.1GHz |
| DC Rated Voltage | 30V |
| Weight | 0.179g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi SS9018FBU Datasheet
Download the complete datasheet for Onsemi SS9018FBU to view detailed technical specifications.
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