
NPN RF Bipolar Junction Transistor in a TO-92 package, designed for through-hole mounting. Features a 15V collector-emitter breakdown voltage and a 50mA continuous collector current. Operates at frequencies up to 1.1GHz with a maximum power dissipation of 400mW. Offers a minimum hFE of 28 and a wide operating temperature range from -55°C to 150°C. This lead-free, RoHS-compliant component is suitable for various RF applications.
Onsemi SS9018GBU technical specifications.
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | 30V |
| Collector Emitter Breakdown Voltage | 15V |
| Collector Emitter Voltage (VCEO) | 15V |
| Collector-emitter Voltage-Max | 15V |
| Continuous Collector Current | 50mA |
| Current Rating | 50mA |
| Drain to Source Voltage (Vdss) | 30V |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 1.1GHz |
| hFE Min | 28 |
| Lead Free | Lead Free |
| Max Collector Current | 50mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 400mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Operating Frequency | 1100 MHz |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 400mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 1.1GHz |
| DC Rated Voltage | 30V |
| Weight | 0.179g |
| RoHS | Compliant |
Download the complete datasheet for Onsemi SS9018GBU to view detailed technical specifications.
No datasheet is available for this part.
