The SSU1N50BTU is a single N-channel MOSFET with a drain to source breakdown voltage of 520V and a continuous drain current of 1.3A. It features a drain to source resistance of 5.3 ohms and a maximum power dissipation of 26W. The device is packaged in a TO-251-3 package and is suitable for through hole mounting. The operating temperature range is -55°C to 150°C, and the device is RoHS compliant.
PackageTO-251-3
MountingThrough Hole
PolarityN-CHANNEL
Power2.5W
Quick Jump:
Technical Specifications
Onsemi SSU1N50BTU technical specifications.
General
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 1.3A |
| Drain to Source Breakdown Voltage | 520V |
| Drain to Source Resistance | 5.3R |
| Drain to Source Voltage (Vdss) | 520V |
| Element Configuration | Single |
| Fall Time | 35ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 340pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 26W |
| Mount | Through Hole |
| Package Quantity | 70 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 5.3R |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 35ns |
| Turn-On Delay Time | 14ns |
| Weight | 0.34308g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi SSU1N50BTU Datasheet
Download the complete datasheet for Onsemi SSU1N50BTU to view detailed technical specifications.
No datasheet is available for this part.