The SZESD1014MUTAG is a unidirectional transient voltage suppressor diode with a breakdown voltage of 5.3V and a maximum non-repetitive peak reverse power dissipation of 450mW. It has a maximum operating temperature of 125°C and a minimum operating temperature of -40°C. The diode is made of silicon and has a clamping voltage of 11V. It is available in a 10-pin S-PDSO-N10 package.
PolarityUNIDIRECTIONAL
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Technical Specifications
Onsemi SZESD1014MUTAG technical specifications.
General
| Max Operating Temperature | 125 |
| Number of Terminals | 10 |
| Min Operating Temperature | -40 |
| Terminal Position | DUAL |
| Number of Elements | 1 |
| Polarity | UNIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 3.3 |
| Breakdown Voltage-Min | 5 |
| Non-rep Peak Rev Power Dis-Max | 450 |
| Clamping Voltage-Max | 11 |
| Breakdown Voltage-Nom | 5.3 |
Compliance
| Lead Free | Yes |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Onsemi SZESD1014MUTAG Datasheet
Download the complete datasheet for Onsemi SZESD1014MUTAG to view detailed technical specifications.
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