
Transient Voltage Suppressor Diode offering low capacitance for high-speed data line protection. Features a UNIDIRECTIONAL polarity and SILICON diode element material. Operates across a wide temperature range from -55°C to 125°C. Includes 4 elements with a maximum reverse voltage of 16V and a minimum breakdown voltage of 16.5V. Maximum clamping voltage is 30V.
Onsemi SZESD1L001W1T2G technical specifications.
| Max Operating Temperature | 125 |
| Number of Terminals | 6 |
| Min Operating Temperature | -55 |
| Terminal Position | DUAL |
| Number of Elements | 4 |
| Polarity | UNIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 16 |
| Breakdown Voltage-Min | 16.5 |
| Clamping Voltage-Max | 30 |
| Lead Free | Yes |
| REACH | Compliant |
| Military Spec | False |
Download the complete datasheet for Onsemi SZESD1L001W1T2G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.