Bidirectional transient voltage suppressor diode offering 30kV ESD protection with ultra-low capacitance. Features a maximum operating temperature of 150°C and a minimum of -55°C. This silicon diode has a maximum repetitive peak reverse voltage of 8V and a minimum breakdown voltage of 10V, with a maximum power dissipation of 0.3W. Designed with two bottom terminals and a single element, it is AEC-Q101.revD qualified.
PolarityBIDIRECTIONAL
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Technical Specifications
Onsemi SZESD7410N2T5G technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 2 |
| Min Operating Temperature | -55 |
| Terminal Position | BOTTOM |
| Number of Elements | 1 |
| Polarity | BIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 8 |
| Breakdown Voltage-Min | 10 |
| Power Dissipation-Max | 0.3 |
Compliance
| Lead Free | Yes |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Onsemi SZESD7410N2T5G Datasheet
Download the complete datasheet for Onsemi SZESD7410N2T5G to view detailed technical specifications.
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