NPN bipolar junction transistor in a TO-220-3 package. Features a 60V collector-emitter breakdown voltage and a continuous collector current rating of 8A. Offers a minimum DC current gain (hFE) of 200 and a collector-emitter saturation voltage of 2V. Designed for through-hole mounting with a maximum power dissipation of 2W. Operates within a temperature range of -65°C to 150°C.
PackageTO-220-3
Current Rating8A
MountingThrough Hole
PolarityNPN
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Technical Specifications
Onsemi TIP100 technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 2V |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 2.5V |
| Continuous Collector Current | 8A |
| Current Rating | 8A |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 200 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 8A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 2W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 200 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 2W |
| RoHS Compliant | No |
| DC Rated Voltage | 60V |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi TIP100 Datasheet
Download the complete datasheet for Onsemi TIP100 to view detailed technical specifications.
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