The TIP101 is an NPN bipolar junction transistor with a maximum collector-emitter voltage of 80V and a continuous collector current of 8A. It features a high current gain of 200hFE and a maximum power dissipation of 2W. The transistor is packaged in a TO-220-3 case and is suitable for through-hole mounting. The operating temperature range is from -65°C to 150°C.
PackageTO-220-3
MountingThrough Hole
PolarityNPN
Power2W
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Technical Specifications
Onsemi TIP101 technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector-emitter Voltage-Max | 2.5V |
| Continuous Collector Current | 8A |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 200 |
| Max Collector Current | 50uA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 2W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 2W |
| RoHS Compliant | No |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi TIP101 Datasheet
Download the complete datasheet for Onsemi TIP101 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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