The TIP101G is a TO-220-3 packaged NPN bipolar junction transistor with a collector-emitter breakdown voltage of 80V and a maximum collector current of 8A. It has a maximum power dissipation of 2W and operates over a temperature range of -65°C to 150°C. The transistor is RoHS compliant and lead free. It is available in a package quantity of 50 units per rail or tube packaging.
PackageTO-220-3
Current Rating8A
PolarityNPN
Quick Jump:
Technical Specifications
Onsemi TIP101G technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 2V |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector-emitter Voltage-Max | 2.5V |
| Current Rating | 8A |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 200 |
| Lead Free | Lead Free |
| Max Collector Current | 8A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 2W |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | 80V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi TIP101G Datasheet
Download the complete datasheet for Onsemi TIP101G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
