PNP Bipolar Junction Transistor (BJT) in a TO-220 package, featuring an 80V collector-emitter breakdown voltage and a continuous collector current rating of 8A. This through-hole mounted component offers a minimum DC current gain (hFE) of 200 and a maximum collector-emitter saturation voltage of 2V. Operating temperature range spans from -65°C to 150°C, with a power dissipation of 2W.
PackageTO-220-3
Current Rating-8A
MountingThrough Hole
PolarityPNP
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Technical Specifications
Onsemi TIP106 technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 2V |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector-emitter Voltage-Max | 2.5V |
| Continuous Collector Current | 8A |
| Current Rating | -8A |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 200 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 80V |
| Max Collector Current | 50uA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 2W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 1200 |
| Packaging | Bulk |
| Polarity | PNP |
| Power Dissipation | 2W |
| RoHS Compliant | No |
| DC Rated Voltage | -80V |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi TIP106 Datasheet
Download the complete datasheet for Onsemi TIP106 to view detailed technical specifications.
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