The TIP106G is a PNP bipolar junction transistor with a collector-emitter breakdown voltage of 80V and a maximum collector current of 8A. It is packaged in a TO-220-3 case and is compliant with RoHS regulations. The transistor has a maximum power dissipation of 2W and operates within a temperature range of -65°C to 150°C.
PackageTO-220-3
Current Rating-8A
PolarityPNP
Power2W
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Technical Specifications
Onsemi TIP106G technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 2V |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector-emitter Voltage-Max | 2.5V |
| Current Rating | -8A |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 200 |
| Lead Free | Lead Free |
| Max Collector Current | 8A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 2W |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | PNP |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | -80V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi TIP106G Datasheet
Download the complete datasheet for Onsemi TIP106G to view detailed technical specifications.
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