PNP bipolar junction transistor in a TO-220AB package. Features a maximum collector current of 8A and a collector-emitter breakdown voltage of 100V. Offers a minimum DC current gain (hFE) of 1000 and a maximum collector-emitter saturation voltage of 2V. Designed for through-hole mounting with a maximum power dissipation of 80W. Operates across a temperature range of -65°C to 150°C and is RoHS compliant.
PackageTO-220AB
Current Rating-8A
MountingThrough Hole
PolarityPNP
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Technical Specifications
Onsemi TIP107 technical specifications.
General
| Package/Case | TO-220AB |
| Collector Base Voltage (VCBO) | -100V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 2V |
| Collector Emitter Voltage (VCEO) | -100V |
| Collector-emitter Voltage-Max | 2.5V |
| Current Rating | -8A |
| Emitter Base Voltage (VEBO) | -5V |
| Height | 9.2mm |
| hFE Min | 1000 |
| Lead Free | Lead Free |
| Length | 9.9mm |
| Max Breakdown Voltage | 100V |
| Max Collector Current | 8A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 2W |
| Mount | Through Hole |
| Package Quantity | 200 |
| Packaging | Bulk |
| Polarity | PNP |
| Power Dissipation | 80W |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | -100V |
| Weight | 1.214g |
| Width | 4.5mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi TIP107 Datasheet
Download the complete datasheet for Onsemi TIP107 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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