
PNP Darlington transistor with a 100V collector-emitter voltage and 8A continuous collector current. Features a 2V collector-emitter saturation voltage and a minimum hFE of 200. This component is housed in a TO-220-3 package, offering a maximum power dissipation of 2W and operating temperature range from -65°C to 150°C. It is RoHS compliant and designed for automotive applications.
Onsemi TIP107G technical specifications.
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 2V |
| Collector Emitter Voltage (VCEO) | 100V |
| Collector-emitter Voltage-Max | 2.5V |
| Current Rating | -8A |
| Emitter Base Voltage (VEBO) | 5V |
| Height | 9.28mm |
| hFE Min | 200 |
| Lead Free | Lead Free |
| Length | 10.28mm |
| Max Collector Current | 8A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 2W |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | PNP |
| Power Dissipation | 80W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | -100V |
| Width | 4.82mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi TIP107G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.