Medium power NPN Darlington bipolar junction transistor (BJT) with a continuous collector current of 2A and a collector-emitter voltage (VCEO) of 60V. Features a high DC current gain (hFE) of 1000 minimum and a low collector-emitter saturation voltage of 2.5V. Encased in a TO-220-3 package, this lead-free, RoHS-compliant component offers a maximum power dissipation of 2W and operates across a temperature range of -65°C to 150°C. Supplied in a 50-piece tube.
PackageTO-220-3
Current Rating2A
PolarityNPN
Power2W
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Technical Specifications
Onsemi TIP110G technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 2.5V |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 2.5V |
| Continuous Collector Current | 2A |
| Current Rating | 2A |
| Emitter Base Voltage (VEBO) | 5V |
| Height | 0.62inch |
| hFE Min | 1000 |
| Lead Free | Lead Free |
| Length | 0.404inch |
| Max Collector Current | 2A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 2W |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | 60V |
| Width | 0.19inch |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi TIP110G Datasheet
Download the complete datasheet for Onsemi TIP110G to view detailed technical specifications.
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