
NPN Darlington bipolar power transistor featuring an 80V collector-emitter voltage (VCEO) and a 2A continuous collector current. This TO-220-3 packaged component offers a minimum DC current gain (hFE) of 500 and a maximum collector-emitter saturation voltage of 2.5V. Designed for medium power applications, it operates within a temperature range of -65°C to 150°C and has a power dissipation of 2W. The device is RoHS compliant and supplied in a 50-piece tube.
Onsemi TIP111G technical specifications.
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | 2.5V |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector-emitter Voltage-Max | 2.5V |
| Current Rating | 2A |
| Emitter Base Voltage (VEBO) | 5V |
| Height | 15.75mm |
| hFE Min | 500 |
| Lead Free | Lead Free |
| Length | 10.28mm |
| Max Breakdown Voltage | 80V |
| Max Collector Current | 2A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 2W |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 440MHz |
| DC Rated Voltage | 80V |
| Width | 4.82mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi TIP111G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.