NPN Epitaxial Silicon Darlington Transistor for through-hole mounting in a TO-220AB package. Features a 100V collector-emitter voltage (VCEO) and 100V collector-base voltage (VCBO). Offers a minimum DC current gain (hFE) of 500 and a maximum collector current of 2A. Maximum power dissipation is 50W, with a typical saturation voltage of 2.5V. Operates across a temperature range of -65°C to 150°C and is RoHS compliant.
PackageTO-220AB
MountingThrough Hole
PolarityNPN
Power2W
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Technical Specifications
Onsemi TIP112TU technical specifications.
General
| Package/Case | TO-220AB |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 2.5V |
| Collector Emitter Voltage (VCEO) | 100V |
| Collector-emitter Voltage-Max | 2.5V |
| Emitter Base Voltage (VEBO) | 5V |
| Height | 16.51mm |
| hFE Min | 500 |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Collector Current | 2A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 50W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | 100V |
| Weight | 1.214g |
| Width | 4.83mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi TIP112TU Datasheet
Download the complete datasheet for Onsemi TIP112TU to view detailed technical specifications.
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