The TIP115 is a PNP bipolar junction transistor with a collector-emitter breakdown voltage of 60V and a maximum collector current of 2A. It is packaged in a TO-220-3 package and is suitable for through-hole mounting. The transistor has a maximum operating temperature range of -65°C to 150°C and a maximum power dissipation of 2W. It is lead-free and not Reach SVHC compliant.
PackageTO-220-3
MountingThrough Hole
PolarityPNP
Power50W
Quick Jump:
Technical Specifications
Onsemi TIP115 technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | -60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Voltage (VCEO) | -60V |
| Collector-emitter Voltage-Max | 2.5V |
| Continuous Collector Current | -2A |
| Emitter Base Voltage (VEBO) | -5V |
| hFE Min | 500 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 2A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 2W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Bulk |
| Polarity | PNP |
| Power Dissipation | 50W |
| Reach SVHC Compliant | No |
| Transition Frequency | 75MHz |
| DC Rated Voltage | -60V |
| Weight | 1.214g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi TIP115 Datasheet
Download the complete datasheet for Onsemi TIP115 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
