The TIP116G is a PNP transistor with a collector-emitter breakdown voltage of 80V and a maximum collector current of 2A. It is packaged in a TO-220-3 case and is rated for a maximum power dissipation of 2W. The transistor has a high current gain of 500 and is suitable for use in a variety of applications. It has an operating temperature range of -65°C to 150°C and is compliant with RoHS regulations.
PackageTO-220-3
Current Rating-2A
PolarityPNP
Power2W
Quick Jump:
Technical Specifications
Onsemi TIP116G technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 2.5V |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector-emitter Voltage-Max | 2.5V |
| Current Rating | -2A |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 500 |
| Lead Free | Lead Free |
| Max Collector Current | 2A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 2W |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | PNP |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | -80V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi TIP116G Datasheet
Download the complete datasheet for Onsemi TIP116G to view detailed technical specifications.
No datasheet is available for this part.
Product Images
