PNP Bipolar Junction Transistor (BJT) in a TO-220AB package. Features a continuous collector current of -5A and a collector-emitter breakdown voltage of 80V. Offers a minimum DC current gain (hFE) of 1000 and a maximum collector-emitter saturation voltage of 2V. Designed for through-hole mounting with a maximum power dissipation of 65W. RoHS compliant and lead-free.
PackageTO-220AB
Current Rating-5A
MountingThrough Hole
PolarityPNP
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Technical Specifications
Onsemi TIP126 technical specifications.
General
| Package/Case | TO-220AB |
| Collector Base Voltage (VCBO) | -80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 2V |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector-emitter Voltage-Max | 4V |
| Continuous Collector Current | -5A |
| Current Rating | -5A |
| Emitter Base Voltage (VEBO) | -5V |
| hFE Min | 1000 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 80V |
| Max Collector Current | 5A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 2W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Bulk |
| Polarity | PNP |
| Power Dissipation | 65W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | -80V |
| Weight | 1.214g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi TIP126 Datasheet
Download the complete datasheet for Onsemi TIP126 to view detailed technical specifications.
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