
PNP Darlington transistor featuring a 100V collector-emitter breakdown voltage and a continuous collector current of 5A. This component offers a maximum power dissipation of 2W and a low collector-emitter saturation voltage of 2V. With a minimum DC current gain (hFE) of 1000, it is housed in a TO-220-3 package and operates within a temperature range of -65°C to 150°C. This RoHS compliant device is supplied in tube packaging.
Onsemi TIP127G technical specifications.
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 2V |
| Collector Emitter Voltage (VCEO) | 100V |
| Collector-emitter Voltage-Max | 4V |
| Continuous Collector Current | 5A |
| Current Rating | -5A |
| Emitter Base Voltage (VEBO) | 5V |
| Height | 9.28mm |
| hFE Min | 1000 |
| Lead Free | Lead Free |
| Length | 10.28mm |
| Max Collector Current | 5A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 2W |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | PNP |
| Power Dissipation | 65W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | -100V |
| Width | 4.82mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi TIP127G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.