NPN Epitaxial Silicon Darlington Transistor, TO-220AB package, featuring a 100V Collector Emitter Voltage (VCEO) and 10A continuous collector current. This through-hole mounted component offers a minimum DC current gain (hFE) of 1000 and a maximum power dissipation of 80W. Operating across a wide temperature range from -65°C to 150°C, it is RoHS compliant and lead-free.
PackageTO-220AB
Current Rating10A
MountingThrough Hole
PolarityNPN
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Technical Specifications
Onsemi TIP142T technical specifications.
General
| Package/Case | TO-220AB |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 2V |
| Collector Emitter Voltage (VCEO) | 100V |
| Collector-emitter Voltage-Max | 3V |
| Current Rating | 10A |
| Emitter Base Voltage (VEBO) | 5V |
| Height | 9.4mm |
| hFE Min | 1000 |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Collector Current | 10A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 80W |
| Mount | Through Hole |
| Package Quantity | 200 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 80W |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | 100V |
| Weight | 1.214g |
| Width | 4.83mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi TIP142T Datasheet
Download the complete datasheet for Onsemi TIP142T to view detailed technical specifications.
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