PNP Epitaxial Darlington Transistor featuring a 100V Collector-Emitter Voltage (VCEO) and a 10A Max Collector Current. This through-hole mounted component offers a high DC current gain (hFE Min) of 1000 and a low Collector-Emitter Saturation Voltage of 2V. Designed for demanding applications, it operates across a wide temperature range from -65°C to 150°C with a Max Power Dissipation of 125W. The device is RoHS compliant and lead-free, packaged in a SC case.
PackageSC
Current Rating-2A
MountingThrough Hole
PolarityPNP
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Technical Specifications
Onsemi TIP147FTU technical specifications.
General
| Package/Case | SC |
| Collector Base Voltage (VCBO) | -100V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 2V |
| Collector Emitter Voltage (VCEO) | 100V |
| Collector-emitter Voltage-Max | 3V |
| Current Rating | -2A |
| Emitter Base Voltage (VEBO) | -5V |
| Height | 16.7mm |
| hFE Min | 1000 |
| Lead Free | Lead Free |
| Length | 15.7mm |
| Max Collector Current | 10A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 125W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | PNP |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | TIP147F |
| DC Rated Voltage | -100V |
| Weight | 6.962g |
| Width | 5.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi TIP147FTU Datasheet
Download the complete datasheet for Onsemi TIP147FTU to view detailed technical specifications.
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