NPN Bipolar Junction Transistor (BJT) in a TO-220-3 package, designed for through-hole mounting. Features a maximum collector current of 1A and a collector-emitter breakdown voltage of 60V, with a DC rated voltage of 40V. Offers a minimum DC current gain (hFE) of 15 and a transition frequency of 3MHz. Operates within a temperature range of -65°C to 150°C, with a maximum power dissipation of 2W. This RoHS compliant component is packaged in bulk.
Frequency3MHz
PackageTO-220-3
Current Rating1A
MountingThrough Hole
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Technical Specifications
Onsemi TIP29 technical specifications.
General
Package/Case
TO-220-3
Collector Base Voltage (VCBO)
40V
Collector Emitter Breakdown Voltage
60V
Collector Emitter Saturation Voltage
700mV
Collector Emitter Voltage (VCEO)
40V
Collector-emitter Voltage-Max
700mV
Current Rating
1A
Emitter Base Voltage (VEBO)
5V
Frequency
3MHz
Gain Bandwidth Product
3MHz
hFE Min
15
Lead Free
Lead Free
Max Breakdown Voltage
40V
Max Collector Current
1A
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
2W
Mount
Through Hole
Number of Elements
1
Package Quantity
200
Packaging
Bulk
Polarity
NPN
Power Dissipation
2W
RoHS Compliant
Yes
Transition Frequency
3MHz
DC Rated Voltage
40V
Weight
1.214g
Compliance
RoHS
Compliant
Datasheet
Onsemi TIP29 Datasheet
Download the complete datasheet for Onsemi TIP29 to view detailed technical specifications.
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