The TIP30AG is a PNP bipolar junction transistor with a collector-emitter voltage maximum of 60V and a maximum collector current of 1A. It features a gain bandwidth product of 3MHz and a minimum current gain of 40. The transistor is packaged in a TO-220-3 package and is RoHS compliant. It operates over a temperature range of -65°C to 150°C and has a maximum power dissipation of 2W.
PackageTO-220-3
PolarityPNP
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Technical Specifications
Onsemi TIP30AG technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Saturation Voltage | 700mV |
| Collector-emitter Voltage-Max | 60V |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 3MHz |
| hFE Min | 40 |
| Lead Free | Lead Free |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 2W |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | PNP |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi TIP30AG Datasheet
Download the complete datasheet for Onsemi TIP30AG to view detailed technical specifications.
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