PNP Bipolar Junction Transistor (BJT) in TO-220AB package, featuring a 100V collector-emitter voltage (VCEO) and a maximum collector current of 1A. This through-hole component offers a minimum DC current gain (hFE) of 40 and a transition frequency of 3MHz. It operates within a temperature range of -65°C to 150°C with a power dissipation of 2W. RoHS compliant and lead-free.
Frequency3MHz
PackageTO-220AB
Voltage100V
Current1A
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Technical Specifications
Onsemi TIP30C technical specifications.
General
| Package/Case | TO-220AB |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 700mV |
| Collector Emitter Voltage (VCEO) | 100V |
| Collector-emitter Voltage-Max | 700mV |
| Current | 1A |
| Current Rating | -1A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 3MHz |
| Gain Bandwidth Product | 3MHz |
| hFE Min | 40 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 100V |
| Max Collector Current | 1A |
| Max Frequency | 3MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 2W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Bulk |
| Polarity | PNP |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 3MHz |
| Voltage | 100V |
| DC Rated Voltage | -100V |
| Weight | 0.042823oz |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi TIP30C Datasheet
Download the complete datasheet for Onsemi TIP30C to view detailed technical specifications.
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