PNP Bipolar Junction Transistor (BJT) in TO-220AB package, featuring a 100V collector-emitter voltage (VCEO) and a maximum collector current of 1A. This through-hole component offers a minimum DC current gain (hFE) of 40 and a transition frequency of 3MHz. It operates within a temperature range of -65°C to 150°C with a power dissipation of 2W. RoHS compliant and lead-free.
Frequency3MHz
PackageTO-220AB
Voltage100V
Current1A
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Technical Specifications
Onsemi TIP30C technical specifications.
General
Package/Case
TO-220AB
Collector Base Voltage (VCBO)
100V
Collector Emitter Breakdown Voltage
100V
Collector Emitter Saturation Voltage
700mV
Collector Emitter Voltage (VCEO)
100V
Collector-emitter Voltage-Max
700mV
Current
1A
Current Rating
-1A
Emitter Base Voltage (VEBO)
5V
Frequency
3MHz
Gain Bandwidth Product
3MHz
hFE Min
40
Lead Free
Lead Free
Max Breakdown Voltage
100V
Max Collector Current
1A
Max Frequency
3MHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
2W
Mount
Through Hole
Number of Elements
1
Package Quantity
50
Packaging
Bulk
Polarity
PNP
Power Dissipation
2W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
3MHz
Voltage
100V
DC Rated Voltage
-100V
Weight
0.042823oz
Compliance
RoHS
Compliant
Datasheet
Onsemi TIP30C Datasheet
Download the complete datasheet for Onsemi TIP30C to view detailed technical specifications.
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