NPN bipolar junction transistor in TO-220-3 package. Features a 100V collector-emitter voltage (VCEO) and a 3A continuous collector current. Offers a maximum power dissipation of 40W and a transition frequency of 3MHz. Operates within a temperature range of -65°C to 150°C. Through-hole mounting design.
Frequency3MHz
PackageTO-220-3
Current Rating3A
MountingThrough Hole
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Technical Specifications
Onsemi TIP31C technical specifications.
General
Package/Case
TO-220-3
Collector Base Voltage (VCBO)
100V
Collector Emitter Breakdown Voltage
100V
Collector Emitter Saturation Voltage
1.2V
Collector Emitter Voltage (VCEO)
100V
Collector-emitter Voltage-Max
1.2V
Current Rating
3A
Emitter Base Voltage (VEBO)
5V
Gain Bandwidth Product
3MHz
Height
16.51mm
hFE Min
10
Lead Free
Lead Free
Length
10.67mm
Max Collector Current
3A
Max Frequency
3MHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
40W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Polarity
NPN
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
3MHz
DC Rated Voltage
100V
Weight
1.214g
Width
4.83mm
Compliance
RoHS
Compliant
Datasheet
Onsemi TIP31C Datasheet
Download the complete datasheet for Onsemi TIP31C to view detailed technical specifications.
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