
PNP Bipolar Power Transistor, TO-220-3 package, featuring a maximum collector current of 3A and a collector-emitter voltage of 60V. This component offers a transition frequency of 3MHz and a minimum DC current gain (hFE) of 10. With a maximum power dissipation of 2W, it operates across a wide temperature range from -65°C to 150°C. Designed for through-hole mounting, this RoHS compliant transistor is supplied in a rail/tube package.
Onsemi TIP32ATU technical specifications.
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | -60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | -1.2V |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 1.2V |
| Current Rating | -3A |
| Emitter Base Voltage (VEBO) | -5V |
| Frequency | 3MHz |
| Gain Bandwidth Product | 3MHz |
| Height | 16.51mm |
| hFE Min | 10 |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Collector Current | 3A |
| Max Frequency | 1MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 2W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | PNP |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 3MHz |
| DC Rated Voltage | -60V |
| Weight | 1.214g |
| Width | 4.83mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi TIP32ATU to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.