PNP Bipolar Junction Transistor (BJT) in a TO-220-3 package, designed for through-hole mounting. Features a maximum collector-emitter voltage (VCEO) of 80V and a continuous collector current rating of -6A. Offers a minimum DC current gain (hFE) of 30 and a transition frequency of 3MHz. Operates within a temperature range of -65°C to 150°C with a maximum power dissipation of 2W.
Frequency3MHz
PackageTO-220-3
Current Rating-6A
MountingThrough Hole
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Technical Specifications
Onsemi TIP42B technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 1.5V |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector-emitter Voltage-Max | 1.5V |
| Current Rating | -6A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 3MHz |
| Gain Bandwidth Product | 3MHz |
| hFE Min | 30 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 80V |
| Max Collector Current | 700uA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 2W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 1200 |
| Packaging | Bulk |
| Polarity | PNP |
| Power Dissipation | 2W |
| RoHS Compliant | No |
| Transition Frequency | 3MHz |
| DC Rated Voltage | -80V |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi TIP42B Datasheet
Download the complete datasheet for Onsemi TIP42B to view detailed technical specifications.
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