
PNP Bipolar Junction Transistor (BJT) with a 40V Collector-Emitter Voltage (VCEO) and 6A Max Collector Current. Features a 3MHz transition frequency and 30 minimum hFE. Packaged in a TO-220-3 standard package, this lead-free, RoHS compliant component operates from -65°C to 150°C with 2W power dissipation.
Onsemi TIP42G technical specifications.
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 40V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | 1.5V |
| Collector Emitter Voltage (VCEO) | 40V |
| Collector-emitter Voltage-Max | 1.5V |
| Current Rating | 100mA |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 3MHz |
| Gain Bandwidth Product | 3MHz |
| Height | 0.62inch |
| hFE Min | 30 |
| Lead Free | Lead Free |
| Length | 0.404inch |
| Max Collector Current | 6A |
| Max Frequency | 3MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 2W |
| Number of Elements | 1 |
| Output Voltage | 2.7V |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | PNP |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 3MHz |
| DC Rated Voltage | -40V |
| Width | 0.19inch |
| RoHS | Compliant |
Download the complete datasheet for Onsemi TIP42G to view detailed technical specifications.
No datasheet is available for this part.
