NPN bipolar junction transistor (BJT) in a TO-220-3 package, designed for through-hole mounting. Features a 400V collector-emitter breakdown voltage and a 1A maximum collector current. Offers a minimum DC current gain (hFE) of 30 and a transition frequency of 10MHz. Operates within a temperature range of -65°C to 150°C, with a maximum power dissipation of 2W. This RoHS compliant component is supplied in bulk packaging.
PackageTO-220-3
Current Rating1A
MountingThrough Hole
PolarityNPN
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Technical Specifications
Onsemi TIP50 technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 500V |
| Collector Emitter Breakdown Voltage | 400V |
| Collector Emitter Saturation Voltage | 1V |
| Collector Emitter Voltage (VCEO) | 400V |
| Collector-emitter Voltage-Max | 1V |
| Current Rating | 1A |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 10MHz |
| hFE Min | 30 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 400V |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 2W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Bulk |
| Polarity | NPN |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 10MHz |
| DC Rated Voltage | 400V |
| Weight | 1.214g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi TIP50 Datasheet
Download the complete datasheet for Onsemi TIP50 to view detailed technical specifications.
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