NPN Bipolar Junction Transistor (BJT) in a TO-220-3 package, featuring a 400V collector-emitter breakdown voltage and a 1A maximum collector current. This power transistor offers a 1V collector-emitter saturation voltage and a 500V collector-base voltage. With a transition frequency of 10MHz and a minimum hFE of 30, it is suitable for applications requiring moderate switching speeds. The component operates within a temperature range of -65°C to 150°C and has a maximum power dissipation of 40W. It is RoHS compliant and supplied in a 50-piece tube.
Frequency10MHz
PackageTO-220-3
Current Rating1A
PolarityNPN
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Technical Specifications
Onsemi TIP50G technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 500V |
| Collector Emitter Breakdown Voltage | 400V |
| Collector Emitter Saturation Voltage | 1V |
| Collector Emitter Voltage (VCEO) | 400V |
| Collector-emitter Voltage-Max | 1V |
| Current Rating | 1A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 10MHz |
| Gain Bandwidth Product | 10MHz |
| Height | 9.28mm |
| hFE Min | 30 |
| Lead Free | Lead Free |
| Length | 10.28mm |
| Max Collector Current | 1A |
| Max Frequency | 10MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 40W |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 40W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 10MHz |
| DC Rated Voltage | 400V |
| Width | 4.82mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi TIP50G Datasheet
Download the complete datasheet for Onsemi TIP50G to view detailed technical specifications.
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