NPN Bipolar Junction Transistor (BJT) for general-purpose amplification. Features 80V collector-emitter breakdown voltage (VCEO) and 1A maximum collector current. Offers a transition frequency of 100MHz and a minimum hFE of 100. Packaged in a TO-226 3-lead through-hole mount, this RoHS compliant component operates from -55°C to 150°C with 1W power dissipation.
Frequency100MHz
PackageTO-226
Current Rating1A
MountingThrough Hole
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Technical Specifications
Onsemi TN3019A technical specifications.
General
| Package/Case | TO-226 |
| Collector Base Voltage (VCBO) | 140V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector-emitter Voltage-Max | 500mV |
| Current Rating | 1A |
| Emitter Base Voltage (VEBO) | 7V |
| Frequency | 100MHz |
| Gain Bandwidth Product | 100MHz |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 1500 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 1W |
| RoHS Compliant | Yes |
| Series | TN3019 |
| Transition Frequency | 100MHz |
| DC Rated Voltage | 80V |
| Weight | 0.25g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi TN3019A Datasheet
Download the complete datasheet for Onsemi TN3019A to view detailed technical specifications.
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