The TN5415A is a PNP bipolar junction transistor with a collector base voltage of 200V and a maximum collector current of 100mA. It is packaged in a TO-226 case and is suitable for through hole mounting. The transistor has a maximum power dissipation of 1W and operates over a temperature range of -55°C to 150°C. It is lead free and RoHS compliant.
PackageTO-226
Current Rating-100mA
MountingThrough Hole
PolarityPNP
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Technical Specifications
Onsemi TN5415A technical specifications.
General
| Package/Case | TO-226 |
| Collector Base Voltage (VCBO) | 200V |
| Collector Emitter Breakdown Voltage | 200V |
| Collector Emitter Voltage (VCEO) | 200V |
| Collector-emitter Voltage-Max | 2.5V |
| Current Rating | -100mA |
| Emitter Base Voltage (VEBO) | 4V |
| hFE Min | 30 |
| Lead Free | Lead Free |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 1500 |
| Packaging | Bulk |
| Polarity | PNP |
| Power Dissipation | 1W |
| RoHS Compliant | Yes |
| Series | TN5415 |
| DC Rated Voltage | -200V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi TN5415A Datasheet
Download the complete datasheet for Onsemi TN5415A to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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