The TN6725A_D26Z is a TO-226 packaged NPN bipolar junction transistor with a maximum collector current of 1.2A and a maximum operating temperature of 150°C. It has a collector-emitter breakdown voltage of 50V and a collector-emitter saturation voltage of 1V. The transistor is RoHS compliant and lead free, with a maximum power dissipation of 1W.
PackageTO-226
MountingThrough Hole
PolarityNPN
Power1W
Quick Jump:
Technical Specifications
Onsemi TN6725A_D26Z technical specifications.
General
| Package/Case | TO-226 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 1V |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 1.5V |
| Emitter Base Voltage (VEBO) | 12V |
| hFE Min | 4000 |
| Lead Free | Lead Free |
| Max Collector Current | 1.2A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 1W |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi TN6725A_D26Z Datasheet
Download the complete datasheet for Onsemi TN6725A_D26Z to view detailed technical specifications.
No datasheet is available for this part.