The TN6725A_D75Z is a TO-226 packaged NPN bipolar junction transistor with a maximum collector current of 1.2A and a collector-emitter breakdown voltage of 50V. It operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 1W. This transistor is suitable for through-hole mounting and is available in an ammo pack with 2000 units per package.
PackageTO-226
MountingThrough Hole
PolarityNPN
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Technical Specifications
Onsemi TN6725A_D75Z technical specifications.
General
| Package/Case | TO-226 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 1V |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 1.5V |
| Emitter Base Voltage (VEBO) | 12V |
| hFE Min | 4000 |
| Max Collector Current | 1.2A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Ammo Pack |
| Polarity | NPN |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi TN6725A_D75Z Datasheet
Download the complete datasheet for Onsemi TN6725A_D75Z to view detailed technical specifications.
No datasheet is available for this part.