The UMC3NT1G is a small outline bipolar junction transistor (BJT) from Onsemi, featuring a maximum collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It has a maximum power dissipation of 150mW and operates within a temperature range of -65°C to 150°C. The device is available in a lead-free SC package, packaged in tape and reel quantities of 3000.
PackageSC
Current Rating100mA
PolarityNPN, PNP
Power150mW
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Technical Specifications
Onsemi UMC3NT1G technical specifications.
General
| Package/Case | SC |
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 250mV |
| Continuous Collector Current | 100mA |
| Current Rating | 100mA |
| hFE Min | 35 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 150mW |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN, PNP |
| Power Dissipation | 150mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | 50V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi UMC3NT1G Datasheet
Download the complete datasheet for Onsemi UMC3NT1G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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