The ZTX749_D26Z is a PNP bipolar junction transistor with a collector-emitter breakdown voltage of 25V and a collector-emitter saturation voltage of -500mV. It has a maximum collector current of 2A and a maximum power dissipation of 1W. The transistor is packaged in a TO-226 case and is mounted through a hole. It operates over a temperature range of -55°C to 150°C.
PackageTO-226
MountingThrough Hole
PolarityPNP
Power1W
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Technical Specifications
Onsemi ZTX749_D26Z technical specifications.
General
| Package/Case | TO-226 |
| Collector Base Voltage (VCBO) | 35V |
| Collector Emitter Breakdown Voltage | 25V |
| Collector Emitter Saturation Voltage | -500mV |
| Collector Emitter Voltage (VCEO) | 25V |
| Collector-emitter Voltage-Max | 500mV |
| Emitter Base Voltage (VEBO) | -5V |
| hFE Min | 100 |
| Max Collector Current | 2A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 1W |
| Radiation Hardening | No |
| Transition Frequency | 100MHz |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi ZTX749_D26Z Datasheet
Download the complete datasheet for Onsemi ZTX749_D26Z to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.