This enhancement-mode N-channel power MOSFET is rated for 600 V drain-source voltage and is optimized for high-voltage switching applications. It features a maximum on-state resistance of 69 mΩ at 10 V gate drive and a typical total gate charge of 60.5 nC. The device is housed in a TO247-C package and supports 53 A continuous drain current at 25 °C, 159 A pulsed drain current, and 390 W power dissipation. Its operating and storage junction temperature range is -55 °C to 150 °C, and the datasheet lists the part as Pb-free, RoHS compliant, and halogen-free.
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Oriental Semiconductor OSG60R069HF technical specifications.
| Drain-Source Voltage | 600V |
| Continuous Drain Current @ 25°C | 53A |
| Continuous Drain Current @ 100°C | 33.3A |
| Pulsed Drain Current | 159A |
| On-Resistance RDS(on) Max @ VGS=10V | 69mΩ |
| Total Gate Charge | 60.5nC |
| Power Dissipation | 390W |
| Single Pulsed Avalanche Energy | 1200mJ |
| Gate-Source Voltage | ±30V |
| Gate Threshold Voltage | 2.0 to 4.0V |
| Thermal Resistance Junction-Case | 0.32°C/W |
| Input Capacitance | 4321pF |
| Output Capacitance | 283.3pF |
| Reverse Transfer Capacitance | 5.2pF |
| Reverse Recovery Time | 532ns |
| Operating Junction Temperature Range | -55 to 150°C |
| Pb Free | yes |
| RoHS | yes |
| Halogen Free | yes |
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