This device is an enhancement-mode N-channel power MOSFET rated for 600 V drain-source voltage in a TO247 package. It features a maximum RDS(on) of 0.069 Ω at 10 V gate drive, 53 A continuous drain current at 25 °C case temperature, and 390 W power dissipation. Typical dynamic performance includes 60.2 nC total gate charge, 4652.2 pF input capacitance, and 174 ns reverse recovery time. The part is specified for operation from -55 °C to 150 °C junction temperature and is marked Pb-free, RoHS compliant, and halogen-free.
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Oriental Semiconductor OSG60R069HZF technical specifications.
| Transistor Type | N-Channel Power MOSFET |
| Drain-Source Voltage | 600V |
| Gate-Source Voltage | 30V |
| Continuous Drain Current @ 25°C | 53A |
| Continuous Drain Current @ 100°C | 33.3A |
| Pulsed Drain Current | 159A |
| Power Dissipation | 390W |
| Single Pulse Avalanche Energy | 1200mJ |
| Drain-Source On-Resistance Max @ 10V | 0.069Ω |
| Gate Threshold Voltage Min | 3.5V |
| Gate Threshold Voltage Max | 4.5V |
| Input Capacitance | 4652.2pF |
| Output Capacitance | 283.6pF |
| Reverse Transfer Capacitance | 8.6pF |
| Total Gate Charge | 60.2nC |
| Reverse Recovery Time | 174ns |
| Operating Junction Temperature | -55 to 150°C |
| Thermal Resistance Junction-to-Case | 0.32°C/W |
| Pb Free | Yes |
| RoHS | Yes |
| Halogen Free | Yes |
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