This enhancement-mode N-channel power MOSFET uses GreenMOS S charge-balance technology to reduce conduction loss and switching loss in compact power supplies. It is rated for 600 V drain-source voltage, 47 A continuous drain current at 25 °C, and 70 mΩ maximum RDS(on) at VGS = 10 V. Typical dynamic parameters include 71.7 nC total gate charge, 3599 pF input capacitance, and 608 mJ single-pulse avalanche energy. The device is supplied in a TO247-C package and is intended for LED lighting, chargers, adapters, telecom power, server power, and solar or UPS equipment.
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Oriental Semiconductor OSG60R070HSF technical specifications.
| Drain-Source Voltage | 600V |
| Continuous Drain Current @ 25°C | 47A |
| Continuous Drain Current @ 100°C | 30A |
| Pulsed Drain Current | 141A |
| Gate-Source Voltage | ±30V |
| Power Dissipation | 278W |
| Single Pulse Avalanche Energy | 608mJ |
| Drain-Source On-Resistance Max @ VGS=10V | 70mΩ |
| Gate Threshold Voltage | 2.9 to 3.9V |
| Input Capacitance | 3599pF |
| Output Capacitance | 337pF |
| Reverse Transfer Capacitance | 10.1pF |
| Total Gate Charge | 71.7nC |
| Gate-Source Charge | 20.6nC |
| Gate-Drain Charge | 22.7nC |
| Gate Plateau Voltage | 5.6V |
| Reverse Recovery Time | 420.7ns |
| Reverse Recovery Charge | 6.9μC |
| Thermal Resistance Junction-Case | 0.45°C/W |
| Operating Junction Temperature | -55 to 150°C |
| Pb Free | yes |
| RoHS | yes |
| Halogen Free | yes |
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