This 600 V enhancement-mode N-channel power MOSFET is designed for resonant switching power applications and uses charge-balance technology to reduce conduction and switching losses. It is rated for 47 A continuous drain current at 25 °C case temperature, 141 A pulsed drain current, and 74 mΩ maximum on-resistance at 10 V gate drive. The device integrates a fast recovery diode to reduce reverse recovery time and is supplied in a TO247 package. Operating junction and storage temperature range is -55 °C to 150 °C, and the exact part is listed as Pb-free, RoHS compliant, and halogen free.
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Oriental Semiconductor OSG60R074HSZF technical specifications.
| Channel Type | N-Channel |
| Operating Mode | Enhancement |
| Drain-Source Voltage | 600V |
| Continuous Drain Current | 47A |
| Continuous Drain Current @ 100°C | 30A |
| Pulsed Drain Current | 141A |
| Drain-Source On-Resistance Max @ 10V | 74mΩ |
| Total Gate Charge | 66.8nC |
| Input Capacitance | 3982pF |
| Output Capacitance | 354pF |
| Reverse Transfer Capacitance | 9.3pF |
| Gate Threshold Voltage | 3 to 4.5V |
| Power Dissipation | 278W |
| Single Pulsed Avalanche Energy | 1000mJ |
| Operating Junction Temperature | -55 to 150°C |
| Reverse Recovery Time | 158.3ns |
| Reverse Recovery Charge | 1.1uC |
| Thermal Resistance Junction-Case | 0.45°C/W |
| Pb Free | yes |
| RoHS | yes |
| Halogen Free | yes |
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