This 600 V single N-channel superjunction MOSFET is part of the GreenMOS SJ MOSFET family and is offered in a TO263 package. It is rated for 36 A continuous drain current at 25°C with 99 mΩ maximum RDS(on) at 10 V. Typical gate charge is 66.8 nC, typical reverse-recovery charge is 1000 nC, and typical output capacitance is 203.3 pF. The device is listed as an industrial-grade production part and has a gate-threshold range of 3 V to 4.5 V.
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Oriental Semiconductor OSG60R099KSZF technical specifications.
| Qualification | Industrial |
| Polarity | Single N |
| Number of Transistors | 1 |
| Drain-Source Voltage Max | 600V |
| Drain-Source On-Resistance Max @ 10 V | 99mΩ |
| Continuous Drain Current Max @ 25°C | 36A |
| Total Gate Charge Typ | 66.8nC |
| Reverse Recovery Charge Typ | 1000nC |
| Output Capacitance Typ | 203.3pF |
| Gate Threshold Voltage Min | 3V |
| Gate Threshold Voltage Max | 4.5V |
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