This device is an industrial single N-channel superjunction MOSFET in a TO220 package. It is rated for 600 V drain-source voltage with a maximum RDS(on) of 99 mΩ at 10 V gate drive. The continuous drain current is listed as 36 A at 25°C. The manufacturer lists a typical total gate charge of 57.8 nC, typical output capacitance of 756 pF, and typical transfer capacitance of 223.8 pF. The gate threshold voltage range is 3 V to 4.5 V, and the lifecycle status is shown as production.
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Oriental Semiconductor OSG60R099PEZF technical specifications.
| Configuration | Single N |
| Polarity | N-Channel |
| Number of Transistors | 1 |
| Drain-Source Voltage (VDS) | 600V |
| RDS(on) Max @ 10V | 99mΩ |
| Continuous Drain Current (ID) Max @ 25°C | 36A |
| Total Gate Charge (Qg) Typ | 57.8nC |
| Output Capacitance (Coss) Typ | 756pF |
| Transfer Capacitance (Co(tr)) Typ | 223.8pF |
| Gate Threshold Voltage Min | 3V |
| Gate Threshold Voltage Max | 4.5V |
| Application Grade | Industrial |
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