This device is a production-status single N super junction MOSFET for industrial applications. It uses a TO247 package and is rated for 600 V drain-source voltage with 30 A drain current at 25°C. Maximum on-resistance is 108 mΩ at 10 V gate drive. Typical gate charge is 56.7 nC, typical reverse-recovery charge is 800 nC, and typical output capacitance is 226.7 pF. Oriental Semiconductor places it in the GreenMOS series of super junction MOSFETs.
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Oriental Semiconductor OSG60R108HSZF technical specifications.
| Qualification Type | Industrial |
| Polarity | Single N |
| Transistor Count | 1 |
| Drain-Source Voltage | 600V |
| On-Resistance Max @ VGS=10V | 108mΩ |
| Drain Current Max @ 25°C | 30A |
| Gate Charge Typ | 56.7nC |
| Reverse Recovery Charge Typ | 800nC |
| Output Capacitance Typ | 226.7pF |
| Gate Threshold Voltage Min | 3V |
| Gate Threshold Voltage Max | 4.5V |
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