This device is an industrial-qualified single N-channel super-junction MOSFET in a TO-247 package. It is rated for 650 V drain-source voltage, 53 A continuous drain current at 25°C, and 69 mΩ maximum on-resistance at 10 V gate drive. Typical dynamic parameters listed by the manufacturer include 60.5 nC gate charge, 10500 pF transfer capacitance, and 283.3 pF output capacitance. The listed gate-threshold voltage range is 2 V to 4 V, and the product status is shown as production.
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Oriental Semiconductor OSG65R069HF technical specifications.
| Qualification | Industrial |
| Polarity | Single N |
| Number of Transistors | 1 |
| Drain-Source Voltage (VDS) Max | 650V |
| On-Resistance (RDS(on)) Max @ 10 V | 69mΩ |
| Continuous Drain Current (ID) Max @ 25°C | 53A |
| Total Gate Charge (Qg) Typ | 60.5nC |
| Transfer Capacitance (Co(tr)) Typ | 10500pF |
| Output Capacitance (Coss) Typ | 283.3pF |
| Gate Threshold Voltage Min | 2V |
| Gate Threshold Voltage Max | 4V |
Download the complete datasheet for Oriental Semiconductor OSG65R069HF to view detailed technical specifications.
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