This 600 V single N-channel SJ MOSFET is qualified for industrial applications and is offered in a TO-220 package. It provides a maximum on-resistance of 99 mΩ at 10 V gate drive, supports 30 A continuous drain current at 25 °C, and has a typical total gate charge of 21.6 nC. The device is listed in production with a typical output capacitance of 235.9 pF and a gate-threshold range of 2.9 V to 3.9 V.
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Oriental Semiconductor OSS60R099PF technical specifications.
| Application Qualification | Industrial |
| Polarity | Single N |
| Transistor Count | 1 |
| Drain-Source Voltage | 600V |
| On-Resistance @ 10 V | 99mΩ |
| Continuous Drain Current @ 25 °C | 30A |
| Total Gate Charge | 21.6nC |
| Output Capacitance | 235.9pF |
| Gate Threshold Voltage Min | 2.9V |
| Gate Threshold Voltage Max | 3.9V |
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