This is a 60 V single N-channel SGT power MOSFET for consumer applications. It is offered in an SOP8 package with 3.5 mΩ maximum drain-source on-resistance at 10 V and 160 A maximum drain current at 25°C. Typical gate charge is 66.1 nC, typical reverse-recovery charge is 73 nC, and typical output capacitance is 1666 pF. Gate-threshold voltage ranges from 1.3 V to 2.5 V, and the device is listed as in production.
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Oriental Semiconductor SFS06R03BF technical specifications.
| Application | Consumer |
| Channel Type | Single N |
| Number of Transistors | 1 |
| Drain-Source Voltage (VDS) Max | 60V |
| Drain-Source On-Resistance (RDS(on)) Max @10V | 3.5mΩ |
| Drain Current (ID) Max @25°C | 160A |
| Total Gate Charge (Qg) Typ | 66.1nC |
| Reverse Recovery Charge (Qrr) Typ | 73nC |
| Output Capacitance (Coss) Typ | 1666pF |
| Gate Threshold Voltage Min | 1.3V |
| Gate Threshold Voltage Max | 2.5V |
Download the complete datasheet for Oriental Semiconductor SFS06R03BF to view detailed technical specifications.
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